ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,545, issued on Feb. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Redistribution layer and methods of fabrication thereof" was invented by Zhen De Ma (New Taipei, Taiwan), Chih-Pin Chiu (Hsinchu, Taiwan), Lee-Wen Hsu (Hsinchu, Taiwan), Liang-Wei Wang (Hsinchu, Taiwan) and Dian-Hau Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide methods of forming a RDL structure with a flat passivation surface. Some embodiments provide a stop layer for chemical mechanical polishing disposed under a passivation layer. Some embodiments provide an extra thickness ...