US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 3 for "Multilayer masking layer and method of forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,335, issued on Feb. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Multilayer masking layer and method of forming same" was invented by Wen-Ju Chen (Taipei, Taiwan), Chung-Ting Ko (Kaohsiung, Taiwan), Ya-Lan Chang (Hsinchu, Taiwan), Ting-Gang Chen (Taipei, Taiwan), Tai-Chun Huang (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first masking layer over the semiconductor layer; performing a first thermal t...