US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 3 for "Memory device with improved data retention" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,317, issued on Feb. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device with improved data retention" was invented by Gulbagh Singh (Hsinchu, Taiwan), Chen-Hao Li (Kaohsiung, Taiwan), Chih-Ming Lee (Tainan, Taiwan), Chi-Yen Lin (Tainan, Taiwan) and Cheng-Tsu Liu (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a memory device that includes a substrate and source and drain regions formed in the substrate. The memory device includes a gate dielectric formed on the substrate and between the source and drain regions. The memory device also includes a gate structu...