US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 3 for "Memory device and fabrication method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,506, issued on Feb. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device and fabrication method thereof" was invented by Jun-Yao Chen (Hsinchu, Taiwan), Sheng-Huang Huang (Hsinchu, Taiwan), Hung-Cho Wang (Hsinchu, Taiwan) and Harry-Hak-Lay Chuang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a bottom electrode, a magnetic tunnel junction (MTJ) stack, a top electrode, and a sidewall spacer. The MTJ stack is over the bottom electrode. The top electrode is over the MTJ stack. The sidewall spacer laterally surrounds the MTJ stack and the top electrode. The sidewall spa...