US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 3 for "Interconnects including graphene capping and graphene barrier layers" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,550, issued on Feb. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Interconnects including graphene capping and graphene barrier layers" was invented by Shin-Yi Yang (New Taipei Clty, Taiwan), Ming-Han Lee (Taipei, Taiwan) and Shau-Lin Shue (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a semiconductor substrate, a dielectric layer, a via, a first graphene layer, and a metal line. The dielectric layer is over the semiconductor substrate. The via extends through the dielectric layer. The first graphene layer extends along a top surface of the via. The metal line sp...