US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 3 for "Integrated circuit with bottom dielectric insulators and fin sidewall spacers for reducing source/drain leakage currents" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,352, issued on Feb. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Integrated circuit with bottom dielectric insulators and fin sidewall spacers for reducing source/drain leakage currents" was invented by Jung-Hung Chang (Hsinchu, Taiwan), Zhi-Chang Lin (Hsinchu, Taiwan), Shih-Cheng Chen (Hsinchu, Taiwan), Tsung-Han Chuang (Hsinchu, Taiwan), Kuo-Cheng Chiang (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a nanostructure transistor including a plurality of first semiconductor nanostructures over a substrate and a source/drain region ...