US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 3 for "Integrated circuit with backside metal gate cut for reduced coupling capacitance" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,364, issued on Feb. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Integrated circuit with backside metal gate cut for reduced coupling capacitance" was invented by Sheng-Tsung Wang (Hsinchu, Taiwan), Huan-Chieh Su (Hsinchu, Taiwan), Chun-Yuan Chen (Hsinchu, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Ching-Wei Tsai (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes a first nanostructure transistor and a second nanostructure transistor. The first and second nanostructure each include gate electrodes. A backside trench separates the first g...