US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 3 for "Insulated-gate bipolar transistor (IGBT) device with improved thermal conductivity" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,333, issued on Feb. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Insulated-gate bipolar transistor (IGBT) device with improved thermal conductivity" was invented by Hung-Te Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An insulated gate bipolar transistor (IGBT) includes: a semiconductor substrate having a top surface and a bottom surface extending in horizontal directions; an isolation region comprising a first silicon compound; a high thermal conductivity region comprising a second silicon compound and having a bottom portion and a sidewall portion, wherein the second silicon compound has ...