US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 3 for "Grid structures of ion beam etching (IBE) systems" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,542,254, issued on Feb. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Grid structures of ion beam etching (IBE) systems" was invented by Chansyun David Yang (Shinchu, Taiwan), Keh-Jeng Chang (Hsinchu, Taiwan), Chan-Lon Yang (Taipei, Taiwan) and Perng-Fei Yuh (Walnut Creek, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to an ion beam etching (IBE) system including a plasma chamber configured to provide plasma, a screen grid, an extraction grid, an accelerator grid, and a decelerator grid. The screen grid receives a screen grid voltage to extract ions from the plasma within the pla...