US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 3 for "Gate-all-around transistor having inner space lined by a semiconductor liner and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,361, issued on Feb. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Gate-all-around transistor having inner space lined by a semiconductor liner and method of forming the same" was invented by Jin-Mu Yin (Kaohsiung, Taiwan), Wei-Yang Lee (Taipei, Taiwan), Chih-Hao Yu (Tainan, Taiwan), Yen-Ting Chen (Taichung, Taiwan) and Chia-Pin Lin (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a semiconductor device and a method of forming the same. A semiconductor device according to the present disclosure includes a first source/drain feature and a second source/drain ...