US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 3 for "Fully reflective phase-edge mask for EUV lithography" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,541,143, issued on Feb. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Fully reflective phase-edge mask for EUV lithography" was invented by Wen-Hao Cheng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A EUV lithography mask includes a substrate of a low thermal expansion material, a first reflective multilayer over the substrate, and a patterned reflective multilayer over the first reflective multilayer. The patterned reflective multilayer includes trenches through the patterned reflective multilayer. Each of the first reflective multilayer and the patterned reflective multilayer includes a stack of f...