US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 3 for "FinFET with long channel length structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,334, issued on Feb. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"FinFET with long channel length structure" was invented by Sung-Hsin Yang (Tainan, Taiwan), Jung-Chi Jeng (Tainan, Taiwan), Ru-Shang Hsiao (Hsinchu, Taiwan), Kuo-Min Lin (Taichung, Taiwan), Z.X. Fan (Hsinchu, Taiwan), Chun-Jung Huang (Tainan, Taiwan) and Wen-Yu Kuo (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a FinFET is disclosed. The method includes depositing a conductive material across each of a number of adjacent fins, depositing a sacrificial mask over the conductive material, patterning the conductive...