US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 3 for "Ferroelectric memory device with relaxation layers" (Belgian Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,323, issued on Feb. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ferroelectric memory device with relaxation layers" was invented by Georgios Vellianitis (Heverlee, Belgium), Marcus Johannes Henricus Van Dal (Linden, Belgium) and Gerben Doornbos (Kessel-Lo, Belgium).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to an integrated chip including a ferroelectric layer. The ferroelectric layer includes a ferroelectric material. A first relaxation layer including a first material, different from the ferroelectric material, is on a first side of the ferroelectric layer. A second relaxation...