US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 3 for "Ferroelectric memory device with carrier structures" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,322, issued on Feb. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Ferroelectric memory device with carrier structures" was invented by Wen-Ling Lu (Hsinchu, Taiwan), Chia-En Huang (Hsinchu, Taiwan), Ya-Yun Cheng (Hsinchu, Taiwan), Yi-Ching Liu (Hsinchu, Taiwan), Huan-Sheng Wei (Hsinchu, Taiwan) and Chung-Wei Wu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A ferroelectric memory device includes a semiconductor structure, a stack structure disposed on the semiconductor structure and including multiple dielectric layers and multiple conductive layers that are alternatingly stacked, and multiple...