US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 3 for "Computing-in-memory device and method" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,541,319, issued on Feb. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Computing-in-memory device and method" was invented by Jonathan Tsung-Yung Chang (Hsinchu, Taiwan), Hidehiro Fujiwara (Hsinchu, Taiwan), Hung-Jen Liao (Hsinchu, Taiwan), Yen-Huei Chen (Hsinchu, Taiwan), Yih Wang (Hsinchu, Taiwan) and Haruki Mori (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A charge sharing scheme is used to mitigate the variations in cell currents in order to achieve higher accuracy for CIM computing. In some embodiments, a capacitor is associated with each SRAM cell, and the capacitors associated with all SRA...