US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 25 for "Semiconductor device with leakage current suppression and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,237,230, issued on Feb. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device with leakage current suppression and method for forming the same" was invented by Bo-Yu Lai (Taipei, Taiwan), Jyun-Chih Lin (Hsinchu, Taiwan), Yen-Ting Chen (Taichung, Taiwan), Wei-Yang Lee (Taipei, Taiwan), Chia-Pin Lin (Hsinchu County, Taiwan), Wei Hao Lu (Taoyuan, Taiwan) and Li-Li Su (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes forming a fin structure over a substrate, forming a sacrificial gate structure over the fin structure, and etching a ...