US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 25 for "Semiconductor device and method" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,237,227, issued on Feb. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device and method" was invented by Kai-Qiang Wen (Taipei, Taiwan), Shih-Fen Huang (Jhubei, Taiwan), Shih-Chun Fu (Hsinchu, Taiwan), Chi-Yuan Shih (Hsinchu, Taiwan) and Feng Yuan (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a fin on a substrate; a first transistor, including: a drain region and a first source region in the fin; and a first gate structure on the fin between the first source region and the drain region; a second transistor, including: the drain region and a second source region in th...