US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 25 for "Outgassing material coated cavity for a micro-electro mechanical system device and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,234,141, issued on Feb. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Outgassing material coated cavity for a micro-electro mechanical system device and methods for forming the same" was invented by Kuei-Sung Chang (Kaohsiung, Taiwan), Tai-Bang An (New Taipei, Taiwan), Chun-Wen Cheng (Zhubei, Taiwan) and Hung-Hua Lin (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A MEMS support structure and a cap structure are provided. At least one vertically-extending trench is formed into the MEMS support structure or a portion of the cap structure. A vertically-extending outgassing material portion having a surf...