US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 25 for "Method of forming a semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,237,214, issued on Feb. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of forming a semiconductor device" was invented by Yi-Nien Su (Hsinchu, Taiwan), Shu-Huei Suen (Jhudong Township, Taiwan), Jyu-Horng Shieh (Hsinchu, Taiwan) and Ru-Gun Liu (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes depositing a second dielectric layer over a first dielectric layer, depositing a third dielectric layer over the second dielectric layer, patterning a plurality of first openings in the third dielectric layer, etching the second dielectric layer through the first openings to form second o...