US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 25 for "Method of fabricating semiconductor device comprising ferroelectric layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,238,934, issued on Feb. 25, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of fabricating semiconductor device comprising ferroelectric layer" was invented by Tzu-Yu Chen (Kaohsiung, Taiwan), Hsin-Yu Lai (Hsinchu, Taiwan), Sheng-Hung Shih (Hsinchu, Taiwan), Fu-Chen Chang (New Taipei, Taiwan) and Kuo-Chi Tu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device is provided. The method includes depositing a ferroelectric layer over the substrate; performing a first ionized physical deposition process to deposit a top electrode layer over the ferroelectric ...