US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 25 for "Memory cell, semiconductor device having the same, and methods of manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,239,031, issued on Feb. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory cell, semiconductor device having the same, and methods of manufacturing the same" was invented by Yu-Chao Lin (Hsinchu, Taiwan), Yu-Sheng Chen (Taoyuan, Taiwan) and Da-Ching Chiou (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell includes a dielectric structure, a storage element structure, and a top electrode. The storage element structure is disposed in the dielectric structure, and the storage element structure includes a first portion and a second portion. The first portion includes a first side and a second...