US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 25 for "Magnetic tunnel junction structures and related methods" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,238,937, issued on Feb. 25, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Magnetic tunnel junction structures and related methods" was invented by Shy-Jay Lin (Hsinchu, Taiwan) and Mingyuan Song (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure is directed to spin-orbit torque ("SOT") magnetoresistive random-access memory ("MRAM") ("SOT-MRAM") structures and methods. A new structure of the SOT channel has one or more magnetic insertion layers superposed or stacked with one or more heavy metal layer(s). Through proximity to a magnetic insertion layer, a surface portion of a heavy metal layer ...