US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 18 for "Stacked capacitor structure and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,670, issued on Feb. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Stacked capacitor structure and manufacturing method thereof" was invented by Hsin-Yu Lai (Hsinchu, Taiwan) and Katherine H. Chiang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a stacked capacitor structure includes: forming a first patterned structure over a substrate; forming a first bottom electrode over the first patterned structure; depositing a first dielectric film over the first bottom electrode; depositing a first top electrode layer over the first dielectric film; forming a first vertical...