US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 18 for "Semiconductor device with metal gate fill structure" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,503, issued on Feb. 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device with metal gate fill structure" was invented by Chung-Liang Cheng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor process system etches gate metals on semiconductor wafers. The semiconductor process system includes a machine learning based analysis model. The analysis model dynamically selects process conditions for an etching process. The process system then uses the selected process conditions data for the next etching process."

The patent was filed on July 25, 2023, under Application No. 18/...