US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 18 for "Semiconductor device structure having air gap and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,537, issued on Feb. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure having air gap and methods of forming the same" was invented by Ting-Ya Lo (Hsinchu, Taiwan), Cheng-Chin Lee (Taipei, Taiwan), Shao-Kuan Lee (Kaohsiung, Taiwan), Chi-Lin Teng (Taichung, Taiwan), Hsin-Yen Huang (New Taipei, Taiwan), Hsiaokang Chang (Hsinchu, Taiwan) and Shau-Lin Shue (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming an interconnect structure includes forming a first conductive layer over a dielectric layer, forming one or more openings in the first conductive lay...