US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 18 for "Self-aligned inner spacer on gate-all-around structure and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,692, issued on Feb. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Self-aligned inner spacer on gate-all-around structure and methods of forming the same" was invented by Tsungyu Hung (Hsinchu, Taiwan), Pang-Yen Tsai (Hsin-Chu Hsian, Taiwan) and Pei-Wei Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary method of forming a semiconductor device comprises forming a fin over a substrate, wherein the fin comprises a first semiconductor layer and a second semiconductor layer comprising different semiconductor ...