US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 18 for "Multi-doped data storage structure configured to improve resistive memory cell performance" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,232,434, issued on Feb. 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Multi-doped data storage structure configured to improve resistive memory cell performance" was invented by Bi-Shen Lee (Hsin-Chu, Taiwan), Hai-Dang Trinh (Hsinchu, Taiwan), Fa-Shen Jiang (Taoyuan, Taiwan) and Hsun-Chung Kuang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method includes forming a bottom electrode over a substrate. A data storage structure is formed on the bottom electrode. The data storage structure co...