US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 18 for "Metal-insulator-metal structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,566, issued on Feb. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Metal-insulator-metal structure" was invented by Yuan-Yang Hsiao (Hsinchu, Taiwan), Hsiang-Ku Shen (Hsinchu, Taiwan) and Dian-Hau Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices, integrated circuits and methods of forming the same are provided. In one embodiment, a semiconductor device includes a metal-insulator-metal structure which includes a bottom conductor plate layer including a first opening and a second opening, a first dielectric layer over the bottom conductor plate layer, a middle conductor pla...