US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 18 for "Memory device including a word line with portions with different sizes in different metal layers" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,318, issued on Feb. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Memory device including a word line with portions with different sizes in different metal layers" was invented by Yi-Hsin Nien (Hsinchu, Taiwan), Wei-Chang Zhao (Hsinchu, Taiwan), Chih-Yu Lin (Taichung, Taiwan), Hidehiro Fujiwara (Hsinchu, Taiwan), Yen-Huei Chen (Hsinchu County, Taiwan) and Ru-Yu Wang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first word line and a second word line. A first portion of the first word line is formed in a first metal layer, a second portion of the first word line is ...