US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 18 for "Memory device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,232,326, issued on Feb. 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device and method of forming the same" was invented by Meng-Han Lin (Hsinchu, Taiwan) and Feng-Cheng Yang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a first conductive via, a first conductive line, an etch stop layer, a plurality of stacks and a first conductive pillar. The first conductive line is disposed on and in physical contact with the first conductive via. The etch stop layer is disposed on and in physical contact with the first conductive line. The stacks are disposed on the etch...