US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 18 for "Memory device, memory cell read circuit, and control method for mismatch compensation" (Taiwanese Inventor)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,352, issued on Feb. 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device, memory cell read circuit, and control method for mismatch compensation" was invented by Ku-Feng Lin (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device that includes a first memory cell, a second memory cell and a sense amplifier. The sense amplifier includes a first branch and a second branch and are configured to output a first voltage and a second voltage to the first memory and the second memory, respectively in a trimming operation. A first clamp device of the sense amplifier includes a first clam...