US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 18 for "Memory cell array circuit and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,323, issued on Feb. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory cell array circuit and method of forming the same" was invented by Chin-I Su (Hsinchu, Taiwan), Chung-Cheng Chou (Hsinchu, Taiwan), Yu-Der Chih (Hsinchu, Taiwan) and Zheng-Jun Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory circuit includes a first driver circuit, a memory cell array including a first column of memory cells, a first transistor coupled between the first driver circuit and the memory cell array, a second driver circuit, a first column of tracking cells and a header circuit coupled to the first...