US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 18 for "Manufacturing method of semiconductor device including hBNC layer, and manufacturing method of HBNC layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,680, issued on Feb. 18, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Manufacturing method of semiconductor device including hBNC layer, and manufacturing method of HBNC layer" was invented by Chih-Piao Chuu (Hsinchu, Taiwan) and Tse-An Chen (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A transistor includes a channel layer, a gate stack, and source/drain regions. The channel layer includes a graphene layer and hexagonal boron nitride (hBN) flakes dispersed in the graphene layer. Orientations of the hBN flakes are substantially aligned. The gate stack is over the channel layer. The source/drain reg...