ALEXANDRIA, Va., Feb. 19 -- United States Patent no. 12,230,712, issued on Feb. 18, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Dielectric fin structure" was invented by Yu-Shan Lu (Hsinchu County, Taiwan), Chung-I Yang (Hsinchu, Taiwan), Kuo-Yi Chao (Hsinchu, Taiwan), Wen-Hsing Hsieh (Hsinchu, Taiwan), Jiun-Ming Kuo (Taipei, Taiwan), Chih-Ching Wang (Kinmen County, Taiwan) and Yuan-Ching Peng (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to the present disclosure includes a dielectric fin having a helmet layer, a gate structure disposed over a first portion of the helmet layer and extending along a direction, and a di...