ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,656, issued on Feb. 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Stacking via structures for stress reduction" was invented by Shu-Shen Yeh (Taoyuan, Taiwan), Che-Chia Yang (Taipei, Taiwan), Chin-Hua Wang (New Taipei, Taiwan), Po-Yao Lin (Zhudong Township, Taiwan), Shin-Puu Jeng (Hsinchu, Taiwan) and Chia-Hsiang Lin (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a first dielectric layer, forming a first redistribution line comprising a first via extending into the first dielectric layer, and a first trace over the first dielectric layer, forming a second dielectric laye...