US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 17 for "Semiconductor device having a switching layer including a compound having aluminum, oxygen, and nitrogen and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,566, issued on Feb. 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device having a switching layer including a compound having aluminum, oxygen, and nitrogen and method for manufacturing the same" was invented by Sheng-Siang Ruan (Hsinchu, Taiwan), Chia-Wen Zhong (Hsinchu, Taiwan), Tzu-Yu Lin (Hsinchu, Taiwan), Ching Ju Yang (Hsinchu, Taiwan), Yao-Wen Chang (Hsinchu, Taiwan) and Chin I Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device that includes a semiconductor substrate, a bottom electrode over the semiconductor substrate, a switching layer over the bott...