ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,607, issued on Feb. 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Photoresist and formation method thereof" was invented by Hui-Chun Lee (Hsinchu, Taiwan), Tung-Hung Feng (Hsinchu, Taiwan) and Peng-Ting Lee (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer is exposed. An organic treatment is performed to the photoresist layer by a hydrophobic organic compound. After performing the organic treatment, the photoresist layer is deve...