US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 17 for "Photonic structure with oxide structure in semiconductor substrate and method for forming the same" (American, Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,554,067, issued on Feb. 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Photonic structure with oxide structure in semiconductor substrate and method for forming the same" was invented by Chan-Hong Chern (Palo Alto, Calif.) and Min-Hsiang Hsu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A photonic structure is provided. The photonic structure includes an oxide structure surrounded by a semiconductor substrate, a buried oxide layer over the semiconductor substrate, and an optical coupling region over the buried oxide layer. The oxide structure has a first side surface and a second side surface opposi...