US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 17 for "Methods for reducing leakage current" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,575, issued on Feb. 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Methods for reducing leakage current" was invented by Tzu-Ging Lin (Kaohsiung, Taiwan), Yi-Chun Chen (Hsinchu, Taiwan), Chieh-Ning Feng (Taichung, Taiwan) and Jih-Jse Lin (Sijhih, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for forming a CPODE structure with reduced leakage current are disclosed herein. The CPODE structure is formed by etching away a pair of fins and forming a pair of trenches in the substrate where the pair of fins was originally located. A leakage path may be present in the area between the pair of fins. Th...