ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,555,747, issued on Feb. 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Methods and systems for dry etching" was invented by Chien-Liang Chen (New Taipei, Taiwan), Shao-Chien Hsu (Hsinchu, Taiwan), Jung-Wang Lu (Taipei, Taiwan) and Meng-Chang Wu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and systems for dry etching are disclosed. The methods and systems use a showerhead with a perforated plate. The perforated plate includes a primary solid zone having no holes; a first annular zone comprising a first plurality of holes with a first total hole area; a secondary solid zone having no hole...