US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 17 for "Method for forming semiconductor-on-insulator (SOI) substrate and recycle substrate" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,391, issued on Feb. 17, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming semiconductor-on-insulator (SOI) substrate and recycle substrate" was invented by Yu-Hung Cheng (Tainan, Taiwan), Ching I Li (Hsinchu, Taiwan) and Chia-Shiung Tsai (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming an SOI substrate includes following operations. A first semiconductor layer, a second semiconductor layer and a third semiconductor layer are formed over a first substrate. A plurality of trenches and a plurality of recesses are formed in the first semiconductor layer, the second...