US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 17 for "Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 17 -- United States Patent no. 12,557,293, issued on Feb. 17, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the same" was invented by Bo-Feng Young (Taipei, Taiwan), Mauricio Manfrini (Zhubei, Taiwan), Sai-Hooi Yeong (Zhubei, Taiwan), Han-Jong Chia (Hsinchu, Taiwan) and Yu-Ming Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes metal interconnect structures embedded within dielectric material layers that overlie a top surface of a substrate, a thin film transistor embedded in a first dielectric material...