US Patent Issued to Taiwan Semiconductor Manufacturing on Feb. 11 for "Transistor including an active region and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,224,352, issued on Feb. 11, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor including an active region and methods for forming the same" was invented by Wu-Wei Tsai (Hsinchu, Taiwan), Hai-Ching Chen (Hsinchu, Taiwan) and Po-Ting Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A thin film transistor includes a stack of an active layer, a gate dielectric, and a gate electrode in a forward or in a reverse order. The active layer includes a compound semiconductor material containing oxygen, at least one acceptor-type element selected from Ga and W, and at least one heavy post-transition metal el...