US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 11 for "Silicide structures in transistors and methods of forming" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,224,330, issued on Feb. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Silicide structures in transistors and methods of forming" was invented by Kai-Di Tzeng (Hsinchu, Taiwan), Chen-Ming Lee (Yangmei, Taiwan), Fu-Kai Yang (Hsinchu, Taiwan) and Mei-Yun Wang (Chu-Pei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a gate stack; a gate spacer on a sidewall of the gate stack; a source/drain region adjacent the gate stack; a silicide; and a source/drain contact electrically connected to the source/drain region through the silicide. The silicide includes a conformal first portion in the source...