US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 11 for "Semiconductor structure, electrode structure and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,225,829, issued on Feb. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure, electrode structure and method of forming the same" was invented by Chung-Yen Chou (Hsinchu, Taiwan), Fu-Ting Sung (Taoyuan County, Taiwan), Yao-Wen Chang (Taipei, Taiwan) and Shih-Chang Liu (Kaohsiung County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes an Nth metal layer, a diffusion barrier layer over the Nth metal layer, a first deposition of bottom electrode material over the diffusion barrier layer, a second deposition of bottom electrode material over the first deposit...