US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 11 for "Semiconductor memory device having word lines surrounded by memory layers and method of making the semiconductor memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,224,243, issued on Feb. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor memory device having word lines surrounded by memory layers and method of making the semiconductor memory device" was invented by Meng-Han Lin (Hsinchu, Taiwan) and Chia-En Huang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes first and second memory units, and first and second staircase vias. The first memory unit includes two first source/bit line portions separated from each other, a first word line surrounding the first source/bit line portions, a first memory film surrou...