US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 11 for "Method of manufacturing a via and a metal wiring for a semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,224,237, issued on Feb. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of manufacturing a via and a metal wiring for a semiconductor device" was invented by Shih-Ming Chang (Hsinchu, Taiwan) and Yu-Tse Lai (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a method of manufacturing a semiconductor device, a first conductive layer is formed over a first interlayer dielectric (ILD) layer disposed over a substrate, a second ILD layer is formed over the first conductive layer, a via is formed in the second ILD layer to contact an upper surface of the first conductive layer, a hard mask pattern i...