US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 11 for "Method for forming semiconductor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,225,834, issued on Feb. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming semiconductor structure" was invented by Hsing-Lien Lin (Hsin-Chu, Taiwan), Hai-Dang Trinh (Hsinchu, Taiwan) and Fa-Shen Jiang (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure includes following operations. A first conductive layer is formed. A first dielectric layer is formed over the first conductive layer, and the first dielectric layer includes at least one trench exposing the first conductive layer. A second conductive layer is formed in the trench. A third c...