US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Feb. 11 for "Method for FinFet fabrication and structure thereof" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,224,210, issued on Feb. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Method for FinFet fabrication and structure thereof" was invented by Han-Yu Lin (Hsinchu, Taiwan), Yi-Ruei Jhan (Keelung, Taiwan), Fang-Wei Lee (Hsinchu, Taiwan), Tze-Chung Lin (Hsinchu, Taiwan), Chao-Hsien Huang (Tainan, Taiwan), Li-Te Lin (Hsinchu, Taiwan), Pinyen Lin (Rochester, N.Y.) and Akira Mineji (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a semiconductor fin protruding from the substrate, an isolation layer disposed above the substrate, a dielectric fin with a bottom portion...