ALEXANDRIA, Va., Feb. 12 -- United States Patent no. 12,224,278, issued on Feb. 11, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Active zones with offset in semiconductor cell" was invented by Guo-Huei Wu (Hsinchu, Taiwan), Chih-Liang Chen (Hsinchu, Taiwan) and Li-Chun Tien (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit includes first-type transistors aligned within a first-type active zone, second-type transistors aligned within a second-type active zone, a first power rail and a second power rail extending in a first direction. A first distance between the long edge of the first power rail and the first alignment boundary of the ...